January 09, 2025

"SCAM" is expected to be greatly improved by the blue LED current density of GaN LED substrates

The substrate for blue LED and blue-violet semiconductor laser is expected to use strontium aluminum silicate (ScAlMgO4, commonly known as: SCAM). The characteristic of SCAM is that the lattice mismatch with GaN is only 1.8%, which is convenient for suppressing crystal defects such as dislocations. It is easier to increase the current density of the blue LED compared to using a sapphire substrate.

Illustration: SCAM crystallizes into GaN LED

The former SCAM crystal is not a single crystal, but polycrystalline, and the size is only the size of the small thumb. Now Futian Crystal Technology Institute has successfully developed a high-quality SCAM single crystal with a diameter of 2 inches. The "rotary pull method (CZ method)" is adopted.

The use of SCAM crystals as a substrate for growing GaN-based semiconductors has appeared. Futian Institute of Crystal Technology has produced a 2 inch SCAM crystal. Currently mainly for LEDs, it is also intended for power components in the future.

SCAM can produce wafers from silicon ingots by a cracking process, so it is expected to achieve cost reduction. The Institute cracked the prototype SCAM crystal and evaluated its C-plane by X-ray diffraction. It was found to have a half-width of 12.9 seconds and the crystal quality was comparable to that of Si.

Futian Crystal Technology Research Institute is scheduled to sell 2 inch SCAM substrates in the spring of 2015. A 4 to 6 inch substrate will also be developed.

In addition, the Institute intends to form a thick GaN crystal with low dislocations on the SCAM crystal, and this GaN crystal is used as a "GaN independent substrate" for forming electronic components. It is envisaged mainly for the manufacture of GaN power components.

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