Cypress's asynchronous SRAM series adds a new 4Mb device with on-chip error correction code

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Cypress Semiconductor, the market leader in static random access memory ( SRAM ), today announced that its 4Mb asynchronous SRAM with error correction code (ECC) is sampling. The on-chip ECC capabilities of these new SRAMs provide the highest level of data reliability without the need for additional error correction chips, simplifying design and reducing board size. The device ensures data reliability in industrial, military, communications, data processing, medical, consumer and automotive applications.

Soft errors caused by background radiation can corrupt the contents of the memory, causing the loss of important data. The hardware ECC module in Cypress's new asynchronous SRAM family performs all error correction functions online without user intervention, achieving the industry's best soft error rate (SER) performance of less than 0.1 FIT/Mb (one FIT equals An error occurs every billion operations of the device). These new devices are compatible with existing fast asynchronous and low-power SRAM pins, allowing customers to increase system reliability without changing board design. These 4Mb SRAMs also have an optional error indication signal that indicates a single bit error correction.

Sunil Thamaran, senior director of Cypress's asynchronous SRAM business unit, said: "Last year we introduced the first 16Mb asynchronous SRAM with on-chip ECC functionality, and the customer response was strong. Adding a different capacity product will enable on-chip ECC technology to benefit Many applications. Cypress has always been committed to developing new SRAM technology to better serve our customers while consolidating our unstoppable leadership position in the market."

Cypress's 4Mb asynchronous SRAM is available in three options - fast 4Mb SRAM, MoBL (longer battery life) 4Mb SRAM, and fast 4Mb SRAM with PowerSnoozeTM (additional deep sleep power saving mode, maximum current only in this mode) It is 15 uA). Each is an industry standard x8 or x16 configuration. These devices operate from a wide range of voltages (1.8V, 3V, and 5V) from -40°C to +85°C (industrial grade) and -40°C to +125°C (automotive grade E).

Availability

The industrial temperature range of these new SRAM products is currently sampling and is expected to be in volume production in July 2015. The package is RoHS-compliant 32-pin SOIC, 32-pin TSOP II, 36-pin SOJ, 44-pin SOJ, 44-pin TSOP II and 48-ball VFBGA.