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The National Institute of Standards and Technology collaborated with the University of Maryland and Howard University to develop micro-filial high-efficiency, nanowire UV LEDs. NIST pointed out that UV-LEDs are very important for digital memory and biosensor devices.
The production of some nano-scale LEDs so far is very time consuming and not suitable for commercialization. The NIST team used photolithography (using light to print images on a material, similar to photography), batch etching techniques such as wet etching and metal deposition, using an electric field to align the nanowires, avoiding the placement of each nanowire separately. This fine, time consuming job. The main feature of the new nanowire LEDs is that they are made of single crystal GaN, each LED consisting of n-type GaN nanowires placed on the surface of a P-type GaN film.
The research team produced and tested more than 40 such LEDs. All of the devices showed very similar luminescence properties and exhibited excellent thermal stability - at room temperature at 750 degrees Celsius and stable operation, continuous operation at room temperature. There is no recession in hours. These properties indicate that new LED production methods can achieve stable and reliable devices. Researchers say the method can also be used in the preparation of other nanowire structures such as large-area nanoscale sources.
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Nanowire UV LEDs are partnered by NIST and the University of Maryland and Howard University
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